Title :
High temperature operation of AlInAs/InGaAs/AlInAs 3D-SMODFETs with record two-dimensional electron gas densities
Author :
Martint, G.H. ; Lepore, A. ; Seaford, M. ; Pereiaslavets, B. ; Spencer, R.M. ; Eastman, L.F.
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
We have designed, fabricated and tested double modulation doped double-strained InP-based MODFETs, which have record sheet densities (8.5/spl times/10/sup 12/ cm/sup -2/) and minimal short channel effects at elevated temperatures. By surrounding a compressively strained channel (In/sub 65/Ga/sub 35/As) with tensilely strained barriers (Al/sub .6/In/sub .4/As) and staying within the critical layer thickness values, we obtained high performance MODFETs. Effective Schottky barrier heights over 1 eV are obtained with minimal degradation of the barrier up to 125/spl deg/C. The devices have saturation currents of greater than 1000 mA/mm, transconductance of >500 mS/mm, good pinch-off characteristics (<2.5 V), output conductance (<15 mS/mm), gate-drain breakdown (7 V) and good microwave performance with a high f/sub MAX/ to f/sub T/ ratio (330/110).
Keywords :
III-V semiconductors; Schottky barriers; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; microwave field effect transistors; semiconductor device testing; two-dimensional electron gas; 15 mS/mm; 25 to 125 C; 500 mS/mm; 7 V; AlInAs-InGaAs-AlInAs; AlInAs/InGaAs/AlInAs 3D-SMODFETs; I-V characteristics; InP; Schottky barrier heights; compressively strained channel; critical layer thickness; double modulation doped double-strained InP-based MODFETs; gate-drain breakdown; high temperature operation; microwave performance; output conductance; pinch-off characteristics; saturation currents; sheet densities; short channel effects; tensile strained barriers; transconductance; two-dimensional electron gas densities; Degradation; Electrons; Epitaxial layers; HEMTs; Indium gallium arsenide; MODFETs; Schottky barriers; Temperature; Testing; Transconductance;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553117
