Title :
Plasma Chemical Etching of Silicon
Author_Institution :
Novosibirsk State Tech. Univ., Novosibirsk
Abstract :
The basic results of plasma etching of silicon in CCI2F2/O2 in quartz reactor with teflon polymer by a covering are considered. The uninconsistent model of plasma chemical of etching (PCE) of silicon in plasma CCl2F2/O2 in conditions of active delivery chemically active particles (CAP) is constructed at the expense of etching teflon polymer. The deep etching of silicon up to 180 mkm for 30 minutes is carried out. However anisotropy of deep etching of silicon low.
Keywords :
micromechanical devices; polymer films; silicon; sputter etching; Si; deep etching; microelectromechanical devices; plasma chemical etching; quartz reactor; silicon; teflon polymer; Anisotropic magnetoresistance; Chemical processes; Chemical technology; Etching; Microelectronics; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma temperature; Silicon;
Conference_Titel :
Electronic Instrument Engineering, 2006. APEIE '06. 8th International Conference on Actual Problems of
Conference_Location :
Novosibirsk
Print_ISBN :
5-7782-0662-3
DOI :
10.1109/APEIE.2006.4292430
