Three dimensional analytical subthreshold model for non-rectangular cross-section FinFETs

Author

Wu, Xusheng ; Chen, Qiang ; Chan, Mansun ; Mansun Chan

Author_Institution

Dept. of Electron. & Electr. Eng., Hong Kong Univ. of Sci. & Technol., China

Volume

2

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

1200

Abstract

The subthreshold characteristics of FinFET´s with non-rectangular fin cross-section are investigated using evanescent-mode analysis. A three-dimensional analytical subthreshold conduction model is developed by applying the superposition principle to a two-dimensional model for ideal rectangular structures. The results from the analytical model are compared to three-dimensional numerical device simulations with good agreement. The model can be used to predict fabrication technology requirement in the scaling of a realistic nano-scaled FinFETs.

Keywords

field effect transistors; semiconductor device models; 3D analytical subthreshold model; analytical subthreshold conduction model; evanescent-mode analysis; ideal rectangular structures; nonrectangular cross-section FinFET; nonrectangular fin cross-section; superposition principle; Analytical models; CMOS technology; FinFETs; Geometry; MOSFET circuits; Predictive models; Semiconductor device modeling; Semiconductor process modeling; Shape; Subthreshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1436740

Filename

1436740