Title :
Lithography prospects for 0.18-/spl mu/m technology and beyond
Author_Institution :
Semicond. Technol. Dev. Center, Hitachi Ltd., Tokyo, Japan
Abstract :
The development of ULSIs has strongly depended on the evolution of lithographic technology. The minimum feature size of the most-advanced ULSIs has reached the resolution limit of conventional optical lithography. To overcome this situation, many approaches, including optical and non-optical lithographic technologies, have been intensively investigated This paper describes the current status and future prospects of the lithography for 0.18-/spl mu/m technology and beyond.
Keywords :
ULSI; electron beam lithography; image resolution; integrated circuit technology; photolithography; technological forecasting; 0.18 mum; ULSI; X-ray lithography; critical dimension control; current status; electron beam lithography; future prospects; lithographic technology; minimum feature size; nonoptical lithographic technologies; optical lithographic technologies; overlay accuracy; resolution; throughput; Electron beams; Electron optics; Energy resolution; Industrial relations; Logic devices; Microprocessors; Optical devices; Random access memory; Ultra large scale integration; X-ray lithography;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553121
