Two-stage high-efficiency X-Band GaN MMIC PA/ rectifier

This paper details the performance of an X-Band MMIC fabricated in a 0.15 μm GaN on SiC process that operates as both a high-efficiency power amplifier (PA) and a high-efficiency rectifier. The MMIC characterized as a PA biased in class AB, achieves over 10W of output power, >20 dB of gain and a PAE of 50% at 9.9 GHz. As a rectifier, the MMIC, achieves over 52% RF-DC conversion efficiency at a power level of >8W. To the best of the authors´ knowledge, this is the first demonstration of a two-stage power combined high-efficiency GaN X-band MMIC power rectifier. The applications are in bi-directional high power wireless energy transfer.