A full-monolithic LNA in 0.18μm SiGe: performance variation due to ESD protection

Author

Feng, Haigang ; Xie, Haolu ; Wang, Albert ; Cheng, Yuhua ; Lloyd, Stephen

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA

Volume

2

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

1226

Abstract

This paper reports design of a 5GHz full-monolithic LNA implemented in a 0.18μm 90GHz f_T SiGe process with and without RF ESD protection. The RF ESD protection is provided by a simple diode ESD protection structure for 2kV ESD protection. Influences of the RF ESD protection structure on the LNA performance were investigated. Measurement results show substantial performance degradation for the LNA with ESD protection compared with that without ESD protection: i.e. a 4dB decrease in gain from 21.75dB dropping to 17.50dB and 0.3dB increase in noise figure from 2.53dB to 2.82dB. Laser cut was used to remove the RF ESD protection device from the LNA circuit in measurements.

Keywords

Ge-Si alloys; electrostatic discharge; integrated circuit design; microwave amplifiers; radiofrequency integrated circuits; 0.18 micron; 17.5 dB; 2 kV; 2.53 dB; 2.82 dB; 21.75 dB; 5 GHz; 90 GHz; RF ESD protection; SiGe; electrostatic discharge; full-monolithic LNA; low-noise amplifier; noise figure; Degradation; Diodes; Electrostatic discharge; Gain measurement; Germanium silicon alloys; Noise measurement; Performance gain; Protection; Radio frequency; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1436752

Filename

1436752