DocumentCode :
3288288
Title :
Radiation hardness assurance categories for COTS technologies
Author :
Hash, G.L. ; Shaneyfelt, M.R. ; Sexton, F.W. ; Winokur, P.S.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
fYear :
1997
fDate :
35635
Firstpage :
35
Lastpage :
40
Abstract :
A comparison of the radiation tolerance of three commercial and one radiation hardened SRAM is presented for total dose, dose rate, and single event effects environments. The devices are categorized according to radiation hardness within each environment and the necessity of considering all applicable environments is enforced. Burn-in effects on radiation hardness are shown for each of the environments
Keywords :
SRAM chips; integrated circuit reliability; integrated circuit testing; radiation hardening (electronics); COTS technologies; SRAM; burn-in effects; dose rate; radiation hardness assurance categories; single event effects environment; total dose; Assembly; CMOS technology; Costs; Defense industry; Government; Integrated circuit technology; Manufacturing; Process control; Radiation hardening; Random access memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation Effects Data Workshop, 1997 IEEE
Conference_Location :
Snowmass Village, CO
Print_ISBN :
0-7803-4061-2
Type :
conf
DOI :
10.1109/REDW.1997.629794
Filename :
629794
Link To Document :
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