DocumentCode
3288288
Title
Radiation hardness assurance categories for COTS technologies
Author
Hash, G.L. ; Shaneyfelt, M.R. ; Sexton, F.W. ; Winokur, P.S.
Author_Institution
Sandia Nat. Labs., Albuquerque, NM, USA
fYear
1997
fDate
35635
Firstpage
35
Lastpage
40
Abstract
A comparison of the radiation tolerance of three commercial and one radiation hardened SRAM is presented for total dose, dose rate, and single event effects environments. The devices are categorized according to radiation hardness within each environment and the necessity of considering all applicable environments is enforced. Burn-in effects on radiation hardness are shown for each of the environments
Keywords
SRAM chips; integrated circuit reliability; integrated circuit testing; radiation hardening (electronics); COTS technologies; SRAM; burn-in effects; dose rate; radiation hardness assurance categories; single event effects environment; total dose; Assembly; CMOS technology; Costs; Defense industry; Government; Integrated circuit technology; Manufacturing; Process control; Radiation hardening; Random access memory;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop, 1997 IEEE
Conference_Location
Snowmass Village, CO
Print_ISBN
0-7803-4061-2
Type
conf
DOI
10.1109/REDW.1997.629794
Filename
629794
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