Title :
Modeling and analysis of SSN in silicon and glass interposers for 3D systems
Author :
Biancun Xie ; Swaminathan, Madhavan
Author_Institution :
Interconnect & Packaging Center, Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
In this paper, an efficient hybrid modeling approach for power delivery network (PDN) with through-silicon vias (TSVs) for 3D systems is proposed. The proposed approach extends multi-layer finite difference method (M-FDM) to include TSVs by extracting their parasitic behavior using an integral equation based solver. Using the proposed modeling technique the power/signal integrity of PDN with TSVs/through-glass vias (TGVs) in lossy silicon interposer and low loss glass interposer is investigated and compared. The comparison indicates the benefits of using silicon interposer for high speed signaling.
Keywords :
finite difference methods; glass; integral equations; silicon; three-dimensional integrated circuits; 3D systems; PDN; SSN; TGV; TSV; glass interposer; integral equation; multilayer finite difference method; power delivery network; silicon interposer; through-glass vias; through-silicon vias; Computational modeling; Couplings; Glass; Insertion loss; Mathematical model; Microstrip; Silicon; Power delivery network; coupling effects; simultaneous switching noise; through-silicon via (TSV);
Conference_Titel :
Electrical Performance of Electronic Packaging and Systems (EPEPS), 2012 IEEE 21st Conference on
Conference_Location :
Tempe, AZ
Print_ISBN :
978-1-4673-2539-4
Electronic_ISBN :
978-1-4673-2537-0
DOI :
10.1109/EPEPS.2012.6457893
