An RF CMOS differential negative resistance for Q-enhancement

Author

Madsen, Per ; Larsen, Torben ; Mikkelsen, Jan Hvolgaard ; Lindof, Jens Chrstian

Author_Institution

Texas Instruments Denmark A/S, Denmark

Volume

2

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

1256

Abstract

This paper presents a differential Q-enhancement circuit implemented in a standard 5 metal layer, 0.25 μm CMOS process. A differential conductance of -2.8 mS is obtained at 2 GHz. This allows the circuit to compensate for a resistance of approximately 360 Ω. The differential reactance at this frequency is equivalent to 1 pF. An analytical expression for the differential admittance is derived and compared with measurements and simulations. When no power is applied to the circuit, the simulations and estimates match the measured data well. However when supply and biasing are applied, the estimates become optimistic while the simulations and measurements still make a good match.

Keywords

CMOS integrated circuits; Q-factor; electric admittance; electric reactance; negative resistance; radiofrequency integrated circuits; -2.8 mS; 0.25 micron; 1 pF; 2 GHz; 360 ohm; Q-enhancement circuit; RF CMOS; differential admittance; differential conductance; differential negative resistance; differential reactance; 3G mobile communication; Active inductors; Admittance measurement; Analytical models; Circuit simulation; Frequency measurement; Impedance; Radio frequency; Reduced instruction set computing; Semiconductor device measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1436763

Filename

1436763