Title :
Investigation of non-independent single event upsets in the TAOS GVSC static RAM
Author :
Hosken, Robert ; Koga, Rocky ; Wilson, Ben ; Marcelli, James ; Laird, Linden
Author_Institution :
Aerosp. Corp., El Segundo, CA, USA
Abstract :
Operation of the two TAOS Honeywell GVSC Flight Computers has been monitored over three years. SEUs in the Micron 32K×8 static RAM chips were characterized and some were found to have a common primary event
Keywords :
CMOS memory circuits; SRAM chips; aerospace computing; ion beam effects; proton effects; radiation hardening (electronics); special purpose computers; 256 kbit; CMOS static RAM; Honeywell flight computers; Micron SRAM chips; TAOS GVSC SRAMs; nonindependent SEU; primary event; single event upsets; Aerospace engineering; Central Processing Unit; EPROM; Hardware; Military computing; Random access memory; Read-write memory; Single event transient; Single event upset; Space technology;
Conference_Titel :
Radiation Effects Data Workshop, 1997 IEEE
Conference_Location :
Snowmass Village, CO
Print_ISBN :
0-7803-4061-2
DOI :
10.1109/REDW.1997.629798
