Title :
Neutron single event effect test results for various SRAM memories
Author :
Thouvenot, Didier ; Trochet, Patrick ; Gaillard, Remi ; Desnoyers, Francois
Author_Institution :
Nucletudes, Les Ulis, France
Abstract :
This paper presents the results of a SEE neutron evaluation carried out on five SRAM types. Sensitivity to the power supply, test pattern and memory cell structures were investigated
Keywords :
CMOS memory circuits; SRAM chips; integrated circuit testing; neutron effects; SEE neutron evaluation; SEE test results; SRAM chips; memory cell structures; neutron single event effect; power supply sensitivity; test pattern sensitivity; Dosimetry; Neutrons; Power dissipation; Power supplies; Random access memory; Read-write memory; Single event upset; Testing; Thin film transistors; Writing;
Conference_Titel :
Radiation Effects Data Workshop, 1997 IEEE
Conference_Location :
Snowmass Village, CO
Print_ISBN :
0-7803-4061-2
DOI :
10.1109/REDW.1997.629799
