Title :
Ionizing radiation response of an amorphous silicon based antifuse
Author :
Benedetto, M. ; Hafer, C.C.
Author_Institution :
UTMC Microelectron. Syst., Colorado Springs, CO, USA
Abstract :
The ionizing radiation response of Ti/W metal electrode amorphous silicon (α-Si) antifuses is examined. It is shown that the resistance of unprogrammed α-Si antifuses improve (i.e. increase resistance) with increasing radiation dose when irradiated with a positive 3 or 5 V bias. The resistance of unprogrammed α-Si antifuses irradiated with zero bias and the resistance of fully programmed antifuses are insensitive to total ionizing radiation dose. The radiation response of partially programmed antifuses (as programmed resistances between 2000 and 4000 Ω) is also examined
Keywords :
amorphous semiconductors; electric fuses; elemental semiconductors; gamma-ray effects; silicon; 2000 to 4000 ohm; 3 to 5 V; Si; Ti-W; Ti/W metal electrode; amorphous silicon antifuse; ionizing radiation response; programmed device; resistance; unprogrammed device; Aluminum; Amorphous silicon; Circuits; Electrodes; Etching; Ionizing radiation; Lighting; PROM; Pulse amplifiers; Voltage;
Conference_Titel :
Radiation Effects Data Workshop, 1997 IEEE
Conference_Location :
Snowmass Village, CO
Print_ISBN :
0-7803-4061-2
DOI :
10.1109/REDW.1997.629806
