Title :
Radiation hardening of commercial CMOS processes through minimally invasive techniques
Author :
Benedetto, J.M. ; Kerwin, D.B. ; Chaffee, J.
Author_Institution :
UTMC Microelectron. Syst., Colorado Springs, CO, USA
Abstract :
UTMC Microelectronic Systems has developed two minimally invasive radiation tolerant modules (RTMs) to harden a commercial CMOS process. The RTMs were successfully inserted into three commercial foundries. The results of UTMC´s hardening effort clearly demonstrate that a total dose hardness of between 100 to 500 krad (SiO2) can be achieved on a commercial CMOS process without significantly altering the commercial flow. This hardness level is from an initial set of experiments. Response factors from this first set of experiments have been identified which, when fully optimized, may increase the final total dose hardness level significantly
Keywords :
CMOS integrated circuits; integrated circuit technology; radiation hardening (electronics); 100 to 500 krad; CMOS process; SiO2; UTMC Microelectronic Systems; commercial foundry; minimally invasive technique; radiation hardening; radiation tolerant module; response factor; total dose hardness; CMOS process; Fabrication; Foundries; Microelectronics; Minimally invasive surgery; Production; Radiation effects; Radiation hardening; Springs; Testing;
Conference_Titel :
Radiation Effects Data Workshop, 1997 IEEE
Conference_Location :
Snowmass Village, CO
Print_ISBN :
0-7803-4061-2
DOI :
10.1109/REDW.1997.629807
