Title :
The effects of nuclear radiation on P-channel CCD imagers
Author :
Spratt, J.P. ; Passenheim, B.C. ; Leadon, R.E.
Author_Institution :
Full Circle Res. Inc., San Marcos, CA, USA
Abstract :
Analysis of the relationship between the Charge Transfer Efficiency (CTE) and dark current of CCD imagers, and the defects introduced into silicon by displacement damage, led to the prediction that P-channel CCDs would be more radiation hard than conventional N-channel CCDs. Proton and Co60 testing of 1024×640 P-channel CCD imagers confirmed this prediction, showing significant reduction in CTE degradation compared to N-channel devices. Also, dark current data shows that “hot pixel” generation is significantly reduced in these devices
Keywords :
CCD image sensors; gamma-ray effects; proton effects; radiation hardening (electronics); Co60 irradiation; P-channel CCD imager; Si; charge transfer efficiency; dark current; defects; displacement damage; hot pixel generation; nuclear radiation effect; proton irradiation; radiation hardness; silicon; Charge coupled devices; Charge transfer; Clocks; Dark current; Electrodes; Electron traps; Image analysis; Protons; Silicon; Space technology;
Conference_Titel :
Radiation Effects Data Workshop, 1997 IEEE
Conference_Location :
Snowmass Village, CO
Print_ISBN :
0-7803-4061-2
DOI :
10.1109/REDW.1997.629809
