Title :
Ge/Si avalanche photodetectors with high gain-bandwidth product
Author :
Ning Duan ; Tsung-Yang Liow ; Lim, Andy Eu-Jin ; Lo, G.Q.
Author_Institution :
Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
Abstract :
We report a normal incidence Ge/Si avalanche photodiode with separate-absorption-charge-multiplication (SACM) structure by selective epitaxial growth. By proper design of charge and multiplication layers and by optimizing the electric field distribution in the depletion region to eliminate germanium impact-ionization at high gain, a high gain-bandwidth product of 310 GHz has been achieved at 1550 nm.
Keywords :
absorption; avalanche photodiodes; elemental semiconductors; epitaxial growth; germanium; impact ionisation; photodetectors; silicon; submillimetre wave detectors; terahertz wave detectors; Ge-Si; SACM structure; avalanche photodetector; avalanche photodiode; bandwidth 310 GHz; charge layer; depletion region; electric field distribution optimization; germanium impact-ionization elimination; high gain-bandwidth product; multiplication layer; selective epitaxial growth; separate-absorption-charge-multiplication structure; size 1550 nm; Bandwidth; Germanium; Junctions; Silicon; Avalanche photodiodes; Fiber Optics Communication; Photodetectors;
Conference_Titel :
Photonics Global Conference (PGC), 2012
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-2513-4
DOI :
10.1109/PGC.2012.6457931
