High performance silicon LDMOS technology for 2 GHz RF power amplifier applications

Author

Wood, A. ; Dragon, C. ; Burger, W.

Author_Institution

Div. of Radio Frequency Semicond., Motorola Inc., Phoenix, AZ, USA

fYear

1996

fDate

8-11 Dec. 1996

Firstpage

87

Lastpage

90

Abstract

The structure, device processing and performance of a 2 GHz, 60 Watt silicon LDMOS RF power transistor are described. At 2 GHz with a 26 Vdc drain operating voltage this device has 1 dB power gain compression at 63 Watts CW and 44% drain efficiency. Under two-tone test conditions, at 60 Watts peak output, 11.2 dB power gain is realized with less than -30 dBc intermodulation distortion and greater than 30% drain efficiency. Excellent linearity is maintained over a wide dynamic range.

Keywords

UHF field effect transistors; UHF power amplifiers; elemental semiconductors; intermodulation distortion; power MOSFET; power field effect transistors; silicon; 11.2 dB; 2 GHz; 26 V; 30 to 44 percent; 60 to 63 W; LDMOS RF power transistor; RF power amplifier applications; Si; Si LDMOS technology; UHF; drain efficiency; linearity; wide dynamic range; Gain; High power amplifiers; Intermodulation distortion; Linearity; Power transistors; Radio frequency; Radiofrequency amplifiers; Silicon; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996. IEDM '96., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-3393-4

Type

conf

DOI

10.1109/IEDM.1996.553128

Filename

553128