Title :
Plasma activation assisted low-temperature direct wafer bonding
Author :
Hongyao Chua ; Xianshu Luo ; Wai Hong See Toh ; Junfeng Song ; Tsung-Yang Liow ; Mingbin Yu ; Guo-Qiang Lo
Author_Institution :
Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
Abstract :
We report our latest activities of low-temperature III/V-to-Si direct wafer bonding assisted by chemical-mechanical polishing (CMP) and O2 plasma activation. We show here the optimized process flow for fusion bonding of InP epitaxial wafers and dies onto silicon (Si) substrate covered with oxide layer of varying thickness. High yield and low cost die-to-wafer bonding is achievable in the near future.
Keywords :
III-V semiconductors; chemical mechanical polishing; elemental semiconductors; epitaxial layers; indium compounds; plasma materials processing; silicon; wafer bonding; InP-Si; O2 plasma activation; chemical-mechanical polishing; die-to-wafer bonding; epitaxial wafer; fusion bonding; optimized process flow; oxide layer; plasma activation assisted low-temperature direct wafer bonding; silicon substrate; Annealing; Chemicals; Cleaning; Compounds; Epitaxial growth; Silicon;
Conference_Titel :
Photonics Global Conference (PGC), 2012
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-2513-4
DOI :
10.1109/PGC.2012.6457954
