DocumentCode
3289387
Title
Plasma activation assisted low-temperature direct wafer bonding
Author
Hongyao Chua ; Xianshu Luo ; Wai Hong See Toh ; Junfeng Song ; Tsung-Yang Liow ; Mingbin Yu ; Guo-Qiang Lo
Author_Institution
Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
fYear
2012
fDate
13-16 Dec. 2012
Firstpage
1
Lastpage
3
Abstract
We report our latest activities of low-temperature III/V-to-Si direct wafer bonding assisted by chemical-mechanical polishing (CMP) and O2 plasma activation. We show here the optimized process flow for fusion bonding of InP epitaxial wafers and dies onto silicon (Si) substrate covered with oxide layer of varying thickness. High yield and low cost die-to-wafer bonding is achievable in the near future.
Keywords
III-V semiconductors; chemical mechanical polishing; elemental semiconductors; epitaxial layers; indium compounds; plasma materials processing; silicon; wafer bonding; InP-Si; O2 plasma activation; chemical-mechanical polishing; die-to-wafer bonding; epitaxial wafer; fusion bonding; optimized process flow; oxide layer; plasma activation assisted low-temperature direct wafer bonding; silicon substrate; Annealing; Chemicals; Cleaning; Compounds; Epitaxial growth; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Global Conference (PGC), 2012
Conference_Location
Singapore
Print_ISBN
978-1-4673-2513-4
Type
conf
DOI
10.1109/PGC.2012.6457954
Filename
6457954
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