Title :
A 3.4–3.6-GHz high efficiency Gallium Nitride power amplifier using bandpass output matching network
Author :
Qianteng Wu ; Xiaoguang Liu
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Davis, Davis, CA, USA
Abstract :
This paper presents a high efficiency Gallium Nitride (GaN) class-F power amplifier (PA) which uses a Chebyshev bandpass filter to realize the optimal fundamental and harmonic impedance matching. The bandpass output matching network also absorbs the output parasitics of the power amplifier. A prototype PA is implemented to verify this idea, which delivers output power of 37.5 dBm with peak power added efficiency (PAE) of 78% and gain of 13.5 dB at 3.5 GHz, and PAE above 74% in a 200 MHz bandwidth.
Keywords :
Chebyshev filters; III-V semiconductors; band-pass filters; gallium compounds; impedance matching; power amplifiers; wide band gap semiconductors; Chebyshev bandpass filter; GaN; bandpass output matching network; bandwidth 200 MHz; class-F power amplifier; efficiency 78 percent; frequency 3.4 GHz to 3.6 GHz; gain 13.5 dB; harmonic impedance matching; optimal fundamental impedance matching; power added efficiency; Electromagnetic heating; HEMTs; Logic gates; Optimization; GaN; Power amplifiers; class-F; efficiency;
Conference_Titel :
Microwave Symposium (IMS), 2015 IEEE MTT-S International
Conference_Location :
Phoenix, AZ
DOI :
10.1109/MWSYM.2015.7167059
