Title : 
A 0.18μm CMOS T/R switch for 900MHz wireless application
         
        
            Author : 
Siti Maisurah, M.H. ; Azmi, I.M. ; Rasidah, S. ; Abdul Rahim, A.I. ; Razman, Y.M.
         
        
            Author_Institution : 
TM Res. & Dev., TMR&D Innovation Centre, Cyberjaya
         
        
        
        
        
        
            Abstract : 
A single-pole double-throw (SPDT) transmit/receive (T/R) switch for 900 MHz applications has been designed in a 0.18 mum CMOS process. The switch exhibit a 16 dB input 1-dB compression point with output 1-dB compression point of 12.9 dB. At 900 MHz of frequency operation, the switch has excellent characteristics whereby the insertion loss is only around 3 dB and isolation around 40 dB for both transmitting and receiving operations. The proposed switch achieves return loss of -11 dB during these operations with switching response time around 4.5 ns.
         
        
            Keywords : 
CMOS integrated circuits; radiocommunication; switches; CMOS T-R switch; frequency 900 MHz; single-pole double-throw transmit-receive switch; size 0.18 mum; wireless application; Frequency; Gallium arsenide; Insertion loss; Low-noise amplifiers; MOSFETs; Receiving antennas; Switches; Transceivers; Transmitting antennas; Voltage control; CMOS; SPDT; Switch; T/R switch;
         
        
        
        
            Conference_Titel : 
RF and Microwave Conference, 2008. RFM 2008. IEEE International
         
        
            Conference_Location : 
Kuala Lumpur
         
        
            Print_ISBN : 
978-1-4244-2866-3
         
        
            Electronic_ISBN : 
978-1-4244-2867-0
         
        
        
            DOI : 
10.1109/RFM.2008.4897390