DocumentCode
3289759
Title
High-frequency AC characteristics of 1.5 nm gate oxide MOSFETs
Author
Momose, H.S. ; Morifuji, E. ; Yoshitomi, T. ; Ohguro, Tatsuya ; Saito, I. ; Morimoto, T. ; Katsumata, Y. ; Iwai, H.
Author_Institution
Microelectron. Eng. Lab., Toshiba Corp., Kawasaki, Japan
fYear
1996
fDate
8-11 Dec. 1996
Firstpage
105
Lastpage
108
Abstract
Results of the high-frequency AC characteristics of 1.5 nm direct-tunneling gate oxide MOSFET´s were shown for the first time. Very high cutoff frequencies of more than 150 GHz were obtained at gate lengths of sub-0.1 /spl mu/m regime due to the high transconductance. Excellent NF/sub min/ value of 0.51 dB was obtained at high-frequency operation of 2 GHz. Also, good operation of the 1.5 nm gate oxide CMOS ring oscillator has been confirmed.
Keywords
MOSFET; UHF field effect transistors; microwave field effect transistors; tunnelling; 0.1 micron; 0.51 dB; 1.5 nm; 150 GHz; 2 GHz; HF AC characteristics; cutoff frequencies; direct-tunneling gate oxide MOSFET; high transconductance; Cutoff frequency; Fabrication; Laboratories; MOSFETs; Microelectronics; Noise measurement; Oxidation; Ring oscillators; Silicon; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-3393-4
Type
conf
DOI
10.1109/IEDM.1996.553132
Filename
553132
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