Title :
High-frequency AC characteristics of 1.5 nm gate oxide MOSFETs
Author :
Momose, H.S. ; Morifuji, E. ; Yoshitomi, T. ; Ohguro, Tatsuya ; Saito, I. ; Morimoto, T. ; Katsumata, Y. ; Iwai, H.
Author_Institution :
Microelectron. Eng. Lab., Toshiba Corp., Kawasaki, Japan
Abstract :
Results of the high-frequency AC characteristics of 1.5 nm direct-tunneling gate oxide MOSFET´s were shown for the first time. Very high cutoff frequencies of more than 150 GHz were obtained at gate lengths of sub-0.1 /spl mu/m regime due to the high transconductance. Excellent NF/sub min/ value of 0.51 dB was obtained at high-frequency operation of 2 GHz. Also, good operation of the 1.5 nm gate oxide CMOS ring oscillator has been confirmed.
Keywords :
MOSFET; UHF field effect transistors; microwave field effect transistors; tunnelling; 0.1 micron; 0.51 dB; 1.5 nm; 150 GHz; 2 GHz; HF AC characteristics; cutoff frequencies; direct-tunneling gate oxide MOSFET; high transconductance; Cutoff frequency; Fabrication; Laboratories; MOSFETs; Microelectronics; Noise measurement; Oxidation; Ring oscillators; Silicon; Transconductance;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553132
