Title :
Identifying semiconductors by D.C. ionization conductivity
Author :
Derenzo, Stephen E. ; Bourret-Courchesne, Edith ; James, Floyd J. ; Klintenberg, Mattias K. ; Porter-Chapman, Yetta ; Wang, Jie ; Weber, Marvin J.
Author_Institution :
Div. of Life Sci., Lawrence Berkeley Nat. Lab., CA
Abstract :
We describe a method for identifying semiconductor radiation detector materials based on the mobility of internally generated electrons and holes. It was designed for the early stages of exploration, when samples are not available as single crystals, but as crystalline powders. Samples are confined under pressure in an electric field and semiconductors are identified by an increase in d.c. conductivity during exposure to a high-intensity source of 60Co gamma rays. Using this method, we have determined that BiOI, PbIF, BiPbO2Cl, BiPbO2Br, BiPbO2I, Bi2GdO4Cl, Pb3O2I2, and Pb5O4I2 are semiconductors
Keywords :
gamma-ray effects; ionisation; radiation detection; semiconductor counters; Bi2GdO4Cl; BiOI; BiPbO2Br; BiPbO2Cl; BiPbO2I; D.C. ionization conductivity; Pb3O2I2; Pb5O4I2; PbIF; crystalline powders; electric field; electron mobility; high-intensity 60Co gamma ray source; hole mobility; semiconductor radiation detector materials; Charge carrier processes; Conducting materials; Conductivity; Crystalline materials; Crystallization; Electron mobility; Ionization; Powders; Semiconductor materials; Semiconductor radiation detectors;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2005 IEEE
Conference_Location :
Fajardo
Print_ISBN :
0-7803-9221-3
DOI :
10.1109/NSSMIC.2005.1596450
