Effects of vacuum conditions on low frequency noise in silicon field emission devices

Author

Trujlllo, J.T. ; Chakhovskoi, Andrei G. ; Hunt, Charles E.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Davis, CA, USA

fYear

1996

fDate

7-12 Jul 1996

Firstpage

133

Lastpage

137

Abstract

The effects of pressure on emission current noise have been studied. Field emission currents from silicon devices were observed over a range of pressures. The current fluctuations were analyzed in both the time and frequency domain. Signal to noise ratios between 0.9 and 6.9 were observed. These values appear to be more dependent on operation time than on pressures. Spectral density coefficients of low frequency measurements range from -1.37 to -1.81. Some pressure dependence is suggested in the lower pressure ranges. At higher pressures emission currents seem to be reduced and the current is cut off completely above a threshold pressure which is somewhere in the 10´s of Torr

Keywords

1/f noise; current fluctuations; electron field emission; elemental semiconductors; pressure; semiconductor device noise; silicon; vacuum microelectronics; SNR; Si; Si field emission devices; current fluctuations; emission current noise; field emission currents; low frequency noise; pressure dependence; signal/noise ratios; spectral density coefficients; vacuum conditions; Anodes; Current measurement; Fluctuations; Frequency measurement; Low-frequency noise; Microelectronics; Noise measurement; Pollution measurement; Semiconductor device noise; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International

Conference_Location

St. Petersburg

Print_ISBN

0-7803-3594-5

Type

conf

DOI

10.1109/IVMC.1996.601790

Filename

601790