Title :
A GaN HEMT Class-F amplifier for UMTS/WCDMA applications
Author :
Khan, F.N. ; Mohammadi, F.A. ; Yagoub, M.C.E.
Author_Institution :
SITE, Ottawa Univ., Ottawa, ON
Abstract :
In this work, the authors present a highly efficient GaN HEMT Class-F amplifier designed for Universal Mobile Telecommunications Systems using Wideband Code Division Multiple Access (UMTS/WCDMA). The amplifier has a peak PAE of 76% with an output power of 10.5 W. A comparison between class-F and inverse Class-F was also made.
Keywords :
3G mobile communication; III-V semiconductors; amplifiers; gallium compounds; high electron mobility transistors; power amplifiers; wide band gap semiconductors; GaN; HEMT class-F amplifier; code division multiple wideband access; power 10.5 W; universal mobile telecommunications systems; 3G mobile communication; Gallium nitride; HEMTs; High power amplifiers; Multiaccess communication; Optical amplifiers; Power amplifiers; Power generation; Power harmonic filters; Voltage; Amplifier; GaN; HEMT; PAE; UMTS;
Conference_Titel :
RF and Microwave Conference, 2008. RFM 2008. IEEE International
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-2866-3
Electronic_ISBN :
978-1-4244-2867-0
DOI :
10.1109/RFM.2008.4897420
