DocumentCode :
3290413
Title :
Modeling Short-channel Effects Of Cmosfet´s Taking Account For Channel-engineering, Defect-enhanced-diffusion And Gate-depletion
Author :
Yu, Bin ; Lee, Wen-Chin ; Hu, Chenming
fYear :
1997
fDate :
3-5 June 1997
Firstpage :
298
Lastpage :
302
Keywords :
CMOS process; CMOS technology; CMOSFETs; Degradation; Design engineering; Doping profiles; Implants; MOSFETs; Semiconductor device modeling; Semiconductor process modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems, and Applications, 1997. Proceedings of Technical Papers. 1997 International Symposium on
Conference_Location :
Taipei, Taiwan
ISSN :
1524-766X
Print_ISBN :
0-7803-4131-7
Type :
conf
DOI :
10.1109/VTSA.1997.614913
Filename :
614913
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3290413
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