Title :
The advantages of n-type heavily-doped silicon as an emitter for vacuum microelectronics
Author :
Huang, Qing-An ; Qin, Ming
Author_Institution :
Microelectron. Center, Southeast Univ., Nanjing, China
Abstract :
The influence of n-type doping density on the emitter has theoretically studied in some detail. The estimated results show that the heavily-doped silicon is proper as a high-efficiency, high-power, and high-frequency emitter for vacuum microelectronics
Keywords :
electron field emission; elemental semiconductors; heavily doped semiconductors; semiconductor doping; silicon; transient response; vacuum microelectronics; doping density; high-efficiency type; high-frequency emitter; high-power operation; n-type heavily-doped Si; vacuum microelectronics; Conductivity; Costs; Current density; Doping; Electrons; Elementary particle vacuum; Mass production; Microelectronics; Silicon; Voltage;
Conference_Titel :
Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
Conference_Location :
St. Petersburg
Print_ISBN :
0-7803-3594-5
DOI :
10.1109/IVMC.1996.601795
