Reduction of baseband electrical memory effects using broadband active baseband load-pull

Author

Chaudhary, Muhammad Akmal ; Lees, J. ; Benedikt, J. ; Tasker, P.

Author_Institution

Dept. of Electr. Eng., Ajman Univ. of Sci. & Technol., Ajman, United Arab Emirates

fYear

2013

fDate

14-18 April 2013

Firstpage

1

Lastpage

4

Abstract

This paper presents an enhanced active baseband load-pull capability that allows constant, frequency independent baseband load environments to be presented across wide modulation bandwidths. This capability is critical in allowing the effects of baseband impedance variation has on the performance of nonlinear microwave devices, when are driven by broadband multi-tone stimuli, to be fully investigated. The experimental investigations were carried out using a 10W GaN HEMT device, under 9-carrier complex multi-tone excitation.

Keywords

HEMT circuits; III-V semiconductors; gallium compounds; power amplifiers; wide band gap semiconductors; 9-carrier complex multitone excitation; GaN; HEMT device; active baseband load-pull capability; baseband electrical memory effects; baseband impedance variation; broadband active baseband load-pull; broadband multitone stimuli; frequency independent baseband load environments; nonlinear microwave devices; power 10 W; wide modulation bandwidths; Baseband; Broadband communication; Frequency measurement; Frequency modulation; Impedance; Microwave amplifiers; Active IF load-pull; baseband; broadband; memory effects; modulation; power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Symposium (IWS), 2013 IEEE International

Conference_Location

Beijing

Type

conf

DOI

10.1109/IEEE-IWS.2013.6616709

Filename

6616709