DocumentCode

3291325

Title

High-performance Deep Submicron Mosts With Polycrystalline-(Si, Ge) Gates

Author

Ponomarev, Y.V. ; Salm, C. ; Schmitz, J. ; Woerlee, P.H. ; Gravesteijn, D.J.

fYear

1997

fDate

3-5 June 1997

Firstpage

311

Lastpage

315

Keywords

CMOS process; Doping; Laboratories; MOSFETs; Manufacturing processes; Optical films; Rapid thermal annealing; Scattering; Subthreshold current; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 1997. Proceedings of Technical Papers. 1997 International Symposium on

Conference_Location

Taipei, Taiwan

ISSN

1524-766X

Print_ISBN

0-7803-4131-7

Type

conf

DOI

10.1109/VTSA.1997.614918

Filename

614918