The substrate cooling effect of ion beam post treatment on ZAO films properties

Author

Wenna Wang ; Dawei Zhang ; Qi Wang ; Chuanxian Tao ; Zhengji Ni ; Songlin Zhuang ; Ting Mei ; Daohua Zhang

Author_Institution

Shanghai Key Lab. of Modern Opt. Syst., Univ. of Shanghai for Sci. & Technol., Shanghai, China

fYear

2012

fDate

13-16 Dec. 2012

Firstpage

1

Lastpage

4

Abstract

ZAO thin films with low surface roughness and low sheet resistance are required in the touch panels and display panels. In this work, we investigated the substrate cooling effect of ion beam post treatment on ZAO films properties, and one new way of obtain low surface roughness and low sheet resistance same time was proposed. The more exciting find of this paper is that, comparing to the samples without cooling during the process of ion beam post treatment, samples with proper cooling voltage show a sheet resistance decrease of 26% (from 11.9 Ω/□ to 8.8 Ω/□) and a roughness decrease of 35.5% (from 13.389 nm to 8.637 nm) without transparency losing. And the viewpoint that substrate cooling has the effect of weakening the crystallization, especially for the sub-face and internal parts of samples is deduced.

Keywords

II-VI semiconductors; aluminium; ion beam assisted deposition; semiconductor thin films; sputter deposition; surface roughness; zinc compounds; ZAO films properties; ZnO:Al; display panels; ion beam post treatment; sheet resistance; substrate cooling effect; surface roughness; thin films; touch panels; transparency losing; wavelength 13.389 nm to 8.637 nm; Cooling; Crystallization; Films; Ion beams; Resistance; Substrates; Surface treatment; aluminum-doped zinc oxide; cooling; ion beam; post treatment; roughness; sheet resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics Global Conference (PGC), 2012

Conference_Location

Singapore

Print_ISBN

978-1-4673-2513-4

Type

conf

DOI

10.1109/PGC.2012.6458051

Filename

6458051