Title :
Temperature dependence of capture coefficients in trapping phenomena
Author :
Lepadatu, Ana-Maria ; Stavarache, Ionel ; Lazanu, Sorina ; Iancu, Vladimir ; Mitroi, Mihai Razvan ; Nigmatulin, Raoul Rashid ; Ciurea, Magdalena Lidia
Author_Institution :
Nat. Inst. of Mater. Phys., Măgurele, Romania
Abstract :
The temperature dependence of the capture coefficients in trapping phenomena is investigated. It is proved that, besides the dependence induced by the thermal velocity of the carriers, the stress-induced traps at the interfaces of the multi-layered structures present a supplementary temperature dependence. This dependence is found to be of Gaussian type and is in a good agreement with the experimental results.
Keywords :
Gaussian distribution; calcium compounds; electron traps; elemental semiconductors; interface states; multilayers; silicon; Gaussian type; Si-CF; carrier thermal velocity; multilayered structures; stress-induced interface traps; temperature dependent capture coefficients; trapping phenomena; Electron traps; Heating; Silicon; Strain; Temperature dependence; Gaussian distribution; Traps; capture coefficients; relaxation currents;
Conference_Titel :
Semiconductor Conference (CAS), 2010 International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-5783-0
DOI :
10.1109/SMICND.2010.5649094
