Title :
A CAD-compatible non-quasi-static MOSFET model
Author :
Liu, W. ; Bowen, C. ; Mi-Chang Chang
Author_Institution :
Semicond. Process & Design Center, Texas Instrum. Inc., Dallas, TX, USA
Abstract :
We propose a novel non-quasi-static model for long-channel MOSFETs which removes the known problems with existing models, such as zero base current and bump features. In a fast switching case, this model reduces the r.m.s. error of I/sub s/, I/sub d/, I/sub g/, I/sub b/ from 22%, 136%, 85%, 100% for BSIM3 and 24%, 77%, 32%, 34% for the Turchetti model down to only 2.1%, 12%, 3.6% and 7.8%, respectively.
Keywords :
CAD; MOSFET; electronic engineering computing; errors; semiconductor device models; switching; CAD-compatible MOSFET model; bump features; fast switching case; long-channel MOSFET; nonquasi-static MOSFET model; zero base current; Differential equations; Instruments; MOSFET circuits; Nonlinear equations; Partial differential equations; Polynomials; Predictive models; Semiconductor process modeling; Space charge; Steady-state;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553143
