Studies of RF sputtered CrSiOx and SiC as series resistor films in FED displays

We have studied the physical and electrical properties of Cr-SiOx (“cermet”) and SiC films for use as series resistors in field emitter displays (FEDs). The cermet films were RF reactively sputtered from a CrSi₂ target in an oxygen/argon mixture. For cermet, we find that as-deposited films are amorphous and exhibit high-Mohm-cm resistivity with refractive index values approaching that of silicon nitride, whereas films heat treated at 350°C for ca. one hour in air or under vacuum are loosely crystalline and exhibit low-to-mid-10E+4 ohm-cm resistivity and refractive index values approaching that of SiO₂. The crystallized films exhibit a roughened surface which will generate microdefects in an overlying oxide film. For sputtered SiC, the as-deposited films are amorphous, with resistivity values of high-10E+4 ohm cm. The heat treated SiC films are finely crystalline, with resistivity values of low-to-mid-10E+5 ohm-cm. They also exhibit the desirable near-linear ohmic characteristics