DocumentCode
3291915
Title
Atomistic Simulations of Tribological Properties of Ultra-Thin Carbon Nanotube Films on Silicon
Author
Lee, N.J. ; Welch, C.R.
Author_Institution
Eng. R&D Center, Inf. Technol. Lab., US Army, Vicksburg, MS, USA
fYear
2010
fDate
14-17 June 2010
Firstpage
238
Lastpage
242
Abstract
Molecular dynamics simulations are used to study relationships between material morphology, adhesion, and sliding friction in carbon nanotube (CNT) coatings at the nanoscale. Two controlled quantities, CNT chirality and vacancy defects, are found to have significant effects on CNT coating adhesion to Si surfaces and sliding friction in turn. For example, using free energy calculations, a CNT of chirality (10,0) with a corresponding diameter of 7.777 Å was observed to have an adhesion energy-per-unit-length of approximately three-times that of a CNT with (5,5) chirality and corresponding diameter of 6.732 Å. Simulations of aligned carbon nanotube arrays containing various vacancy defect densities in sliding contact with Si substrates were also performed. Friction and wear were shown to increase with defect density. Similar studies are underway to investigate how other characteristics of CNTs in addition to chirality, such as CNT length distribution and defect concentration, affect adhesion and friction in CNT-Si coatings. Outcomes may shed light on fundamental principles governing, for example, sliding interfaces in micro- and nano-electro-mechanical and other tribological systems.
Keywords
adhesion; carbon nanotubes; chirality; coatings; crystal defects; crystal morphology; molecular dynamics method; silicon; sliding friction; thin films; C; Si; adhesion; atomistic simulations; carbon nanotube coatings; chirality; defect density; material morphology; micro-electro-mechanical systems; molecular dynamics simulations; nano-electro-mechanical systems; silicon; sliding friction; tribological properties; ultra-thin carbon nanotube films; vacancy defects; wear; Adhesives; Atomic layer deposition; Carbon nanotubes; Computational modeling; Friction; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
High Performance Computing Modernization Program Users Group Conference (HPCMP-UGC), 2010 DoD
Conference_Location
Schaumburg, IL
Print_ISBN
978-1-61284-986-7
Type
conf
DOI
10.1109/HPCMP-UGC.2010.39
Filename
6018021
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