A Low-Voltage Sense Amplifier for Embedded Flash Memories

This brief presents a novel sense amplifier with an enhanced current sensing method for embedded flash memories, capable of operating at a voltage as low as 1.2 V. A dynamic bit-line clamping circuit and a novel reference voltage generation circuit are also employed to improve the precharge speed and sensing window under low power supply voltage. The sense amplifier was implemented in a flash realized with a 0.13-μm flash technology. Experimental results show a read access time of 32 ns with a power supply voltage of 1.2 V and slow corner at 125 °C.