Electrical characteristics of metal silicide field emitters

Author

Chi, Eung Joon ; Shim, Jae Yeob ; Baik, Vong Koo

Author_Institution

Dept. of Metall. Eng., Yonsei Univ., Seoul, South Korea

fYear

1996

fDate

7-12 Jul 1996

Firstpage

188

Lastpage

191

Abstract

To improve silicon field emitter, Ti and Co silicides were formed on silicon tips. Silicides were produced by deposition of metal (Ti and Co) and subsequent annealing. I-V characteristics of as-grown silicon tips and silicide emitters were investigated. Turn-on voltage and emission current of silicon tips were 220 V and 10^-8 A, respectively. Ti and Co silicide lowered turn-on voltage significantly. The emission current of Ti and Co silicide emitters were 140 V and 180 V, respectively. Both silicides increased emission current to order of 10^-7 A. Ti and Co silicide emitters have enhanced field emission of silicon tips due to large emitting area and lower work function, respectively

Keywords

annealing; cobalt compounds; electron field emission; titanium compounds; work function; 140 to 220 V; 1E-8 to 1E-7 A; CoSi₂; TiSi₂; annealing; area; electrical characteristics; emission current; metal deposition; metal silicide field emitter; silicon tip; turn-on voltage; work function; Annealing; Conducting materials; Electric variables; Fabrication; Heat treatment; Materials testing; Silicides; Silicon; Thermal conductivity; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International

Conference_Location

St. Petersburg

Print_ISBN

0-7803-3594-5

Type

conf

DOI

10.1109/IVMC.1996.601803

Filename

601803