Title :
Exhaustive experimental study of tunnel field effect transistors (TFETs): From materials to architecture
Author :
Le Royer, C. ; Mayer, F.
Author_Institution :
CEA-LETI Minatec, Grenoble
Abstract :
The goal of this paper is to present and to analyze the tunnel FET and its specific properties (small subthreshold swing, very low OFF currents). We investigate the opportunities offered by this sub-ldquokT/qrdquo swing device and review the issues that TFET has to overcome (ambipolar behaviour, low ON current) for future circuit applications. For that purpose we report on experimental results on SOI, Si1-xGexOI & GeOI TFETs, fabricated using a fully depleted SOI CMOS process flow with high-k & metal gate stack.
Keywords :
MOSFET; silicon-on-insulator; tunnel transistors; GeOI TFET; OFF currents; SOI TFET; Si; Si1-xGex; Si1-xGexOI TFET; depleted SOI CMOS process flow; fully depleted SOI CMOS process flow; high-k gate stack; metal gate stack; subthreshold swing; tunnel field effect transistors; CMOS process; Carbon nanotubes; FETs; High K dielectric materials; High-K gate dielectrics; MOSFET circuits; Organic materials; Switches; Tunneling; Voltage;
Conference_Titel :
Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on
Conference_Location :
Aachen
Print_ISBN :
978-1-4244-3704-7
DOI :
10.1109/ULIS.2009.4897537
