• DocumentCode
    3292089
  • Title

    Exhaustive experimental study of tunnel field effect transistors (TFETs): From materials to architecture

  • Author

    Le Royer, C. ; Mayer, F.

  • Author_Institution
    CEA-LETI Minatec, Grenoble
  • fYear
    2009
  • fDate
    18-20 March 2009
  • Firstpage
    53
  • Lastpage
    56
  • Abstract
    The goal of this paper is to present and to analyze the tunnel FET and its specific properties (small subthreshold swing, very low OFF currents). We investigate the opportunities offered by this sub-ldquokT/qrdquo swing device and review the issues that TFET has to overcome (ambipolar behaviour, low ON current) for future circuit applications. For that purpose we report on experimental results on SOI, Si1-xGexOI & GeOI TFETs, fabricated using a fully depleted SOI CMOS process flow with high-k & metal gate stack.
  • Keywords
    MOSFET; silicon-on-insulator; tunnel transistors; GeOI TFET; OFF currents; SOI TFET; Si; Si1-xGex; Si1-xGexOI TFET; depleted SOI CMOS process flow; fully depleted SOI CMOS process flow; high-k gate stack; metal gate stack; subthreshold swing; tunnel field effect transistors; CMOS process; Carbon nanotubes; FETs; High K dielectric materials; High-K gate dielectrics; MOSFET circuits; Organic materials; Switches; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on
  • Conference_Location
    Aachen
  • Print_ISBN
    978-1-4244-3704-7
  • Type

    conf

  • DOI
    10.1109/ULIS.2009.4897537
  • Filename
    4897537
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3292089