• DocumentCode
    3292101
  • Title

    The elastic properties of PECVD silicon oxynitride films on gallium arsenide

  • Author

    Hickernell, T.S. ; Hickernell, F.S.

  • Author_Institution
    Motorola Inc., Scottsdale, AZ, USA
  • fYear
    1991
  • fDate
    8-11 Dec 1991
  • Firstpage
    51
  • Abstract
    The elastic constants of low-stress plasma-enhanced chemical vapor deposition (PECVD) grown silicon oxynitride on GaAs are calculated from surface acoustic wave (SAW) measurements. Films from 1000 to 4000 nm in thickness are shown to have very consistent densities and SAW velocity dispersion characteristics. The density of the films is below that of bulk fused quartz, but the elastic moduli are similar to those of fused quartz. The low density indicates that low-temperature PECVD silicon oxynitride is inherently porous compared to an equivalent bulk material
  • Keywords
    acoustic wave velocity; elastic constants; insulating thin films; plasma CVD coatings; silicon compounds; surface acoustic waves; 1000 to 4000 nm; PECVD; SiOxN7-GaAs; elastic constants; elastic properties; low-stress plasma-enhanced chemical vapor deposition; surface acoustic wave; velocity dispersion; Chemical vapor deposition; Gallium arsenide; Plasma chemistry; Plasma density; Plasma measurements; Plasma properties; Plasma waves; Semiconductor films; Silicon; Surface acoustic waves;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultrasonics Symposium, 1991. Proceedings., IEEE 1991
  • Conference_Location
    Orlando, FL
  • Type

    conf

  • DOI
    10.1109/ULTSYM.1991.234126
  • Filename
    234126
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3292101