DocumentCode
3292129
Title
Computational exploration of novel silicon nanostructures
Author
Nishio, Kengo ; Ozaki, Taisuke ; Morishita, Tetsuya ; Shinoda, Wataru ; Mikami, Masuhiro
Author_Institution
Res. Inst. for Comput. Sci. (RICS), Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba
fYear
2009
fDate
18-20 March 2009
Firstpage
61
Lastpage
64
Abstract
Discovery of novel Si nanostructures would open up a new avenue for science and technology as the discoveries of C60 and carbon nanotubes did. With this expectation, we have explored novel Si nanostructures by combining empirical molecular dynamics simulations and structure optimizations with the density functional theory. Our molecular-dynamics simulations demonstrate (1) an icosahedral Si nanodot forms by freezing a droplet in vacuum, (2) Si-fullerene-linked nanowires, such as Si16- and Si20-linked nanowires, form by freezing liquid Si inside carbon nanotubes, and (3) a polyicosahedral Si nanowire forms by freezing liquid Si inside a cylindrical nanopore. The unique cage structure of the polyicosahedral Si nanowire allows us to tune the electronic properties by encapsulating guest atoms into its cages. Our density functional theory calculations reveal that a semiconducting hydrogen-terminated polyicosahedral Si nanowire becomes metallic by the sodium and iodine doping.
Keywords
band structure; density functional theory; elemental semiconductors; iodine; molecular dynamics method; nanowires; semiconductor quantum wires; silicon; sodium; Si-fullerene-linked nanowires; Si:I; Si:Na; cage structure; density functional theory; electronic properties; empirical molecular-dynamics simulations; freezing; icosahedral nanodot; iodine doping; semiconducting hydrogen-terminated polyicosahedral nanowire; silicon nanostructures; sodium doping; structure optimizations; Atomic measurements; Carbon nanotubes; Crystallization; Density functional theory; Equations; Nanoscale devices; Nanostructures; Nanowires; Potential energy; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on
Conference_Location
Aachen
Print_ISBN
978-1-4244-3704-7
Type
conf
DOI
10.1109/ULIS.2009.4897539
Filename
4897539
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