DocumentCode
3292130
Title
Influence of surface treatment of CdZnTe for the radiation detector
Author
Park, Se Hwan ; Kim, Yong Kyun ; Kim, Han Soo
Author_Institution
Korea Adv. Energy Res. Inst., Daejeon, South Korea
Volume
3
fYear
2005
fDate
23-29 Oct. 2005
Firstpage
1399
Lastpage
1401
Abstract
CdZnTe is the most promising material for the room temperature radiation detector. Previously many studies have been done for the fabrication process of CdZnTe radiation detector. Usually the CdZnTe surface was mechanically polished and etched with bromine/methanol. The Au or Pt was deposited to make the metal contact on the crystal. From the previous works, it was concluded that the dark current of the CdZnTe detector is greatly influenced by the surface roughness. We study the fabrication process of CdZnTe detector with indium electrode contacts. The dependency of the dark current on the surface treatment was studied. The CdZnTe crystal is treated thermally during the electrode deposition, and the effect of the thermal treatment to the detector performance is studied.
Keywords
II-VI semiconductors; cadmium compounds; chemical mechanical polishing; dark conductivity; etching; heat treatment; semiconductor counters; surface roughness; wide band gap semiconductors; zinc compounds; CdZnTe radiation detector; CdZnTe surface treatment; dark current; electrode deposition; indium electrode contacts; room temperature radiation detector; surface roughness; thermal treatment; Crystalline materials; Dark current; Electrodes; Etching; Fabrication; Radiation detectors; Rough surfaces; Surface roughness; Surface treatment; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium Conference Record, 2005 IEEE
ISSN
1095-7863
Print_ISBN
0-7803-9221-3
Type
conf
DOI
10.1109/NSSMIC.2005.1596581
Filename
1596581
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