• DocumentCode
    3292130
  • Title

    Influence of surface treatment of CdZnTe for the radiation detector

  • Author

    Park, Se Hwan ; Kim, Yong Kyun ; Kim, Han Soo

  • Author_Institution
    Korea Adv. Energy Res. Inst., Daejeon, South Korea
  • Volume
    3
  • fYear
    2005
  • fDate
    23-29 Oct. 2005
  • Firstpage
    1399
  • Lastpage
    1401
  • Abstract
    CdZnTe is the most promising material for the room temperature radiation detector. Previously many studies have been done for the fabrication process of CdZnTe radiation detector. Usually the CdZnTe surface was mechanically polished and etched with bromine/methanol. The Au or Pt was deposited to make the metal contact on the crystal. From the previous works, it was concluded that the dark current of the CdZnTe detector is greatly influenced by the surface roughness. We study the fabrication process of CdZnTe detector with indium electrode contacts. The dependency of the dark current on the surface treatment was studied. The CdZnTe crystal is treated thermally during the electrode deposition, and the effect of the thermal treatment to the detector performance is studied.
  • Keywords
    II-VI semiconductors; cadmium compounds; chemical mechanical polishing; dark conductivity; etching; heat treatment; semiconductor counters; surface roughness; wide band gap semiconductors; zinc compounds; CdZnTe radiation detector; CdZnTe surface treatment; dark current; electrode deposition; indium electrode contacts; room temperature radiation detector; surface roughness; thermal treatment; Crystalline materials; Dark current; Electrodes; Etching; Fabrication; Radiation detectors; Rough surfaces; Surface roughness; Surface treatment; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium Conference Record, 2005 IEEE
  • ISSN
    1095-7863
  • Print_ISBN
    0-7803-9221-3
  • Type

    conf

  • DOI
    10.1109/NSSMIC.2005.1596581
  • Filename
    1596581