Title :
High performance Schottky barrier MOSFETs on UTB SOI
Author :
Urban, C. ; Sandow, C. ; Zhao, Q.T. ; Mantl, S.
Author_Institution :
Inst. of Bio- & Nanosystems, Forschungszentrum Julich, Julich
Abstract :
This paper presents fully-depleted short-channel Schottky barrier (SB) MOSFETs with silicidation induced dopant segregation of B at a low temperature of 450degC. The integration of nickel silicide combined with either As or B segregation significantly improves the switching performance of dopant-free SB-MOSFETs. The implantation dose dependence of the device characteristics is studied on long channel p- and n-type SB-MOSFETs. An enhanced device performance with higher oncurrents and a strong suppression of the ambipolar behaviour, which is typical for SB-MOSFETs, is observed with increasing implantation dose. Short channel p-type SB-MOSFETs with a channel length of 80 nm show an on-current of 525 muA/mum at an Ion/Ioff-ratio of 104, becoming competitive with state-of-the-art SB-MOSFETs.
Keywords :
MOSFET; Schottky barriers; nickel compounds; semiconductor doping; silicon-on-insulator; NiSi; Schottky barrier MOSFET; Si-SiO2; UTB SOI; ambipolar behaviour; dopant segregation; implantation dose dependence; nickel silicide integration; silicidation; size 80 nm; switching performance; temperature 450 C; Charge carrier processes; Etching; Fabrication; MOSFETs; Plasma applications; Plasma temperature; Schottky barriers; Silicidation; Silicides; Silicon on insulator technology;
Conference_Titel :
Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on
Conference_Location :
Aachen
Print_ISBN :
978-1-4244-3704-7
DOI :
10.1109/ULIS.2009.4897540
