Title :
Distortion analysis of GaAs MESFETs based on physical model using PISCES-HB
Author :
Sato-Iwanaga, J. ; Fujimoto, K. ; Masato, H. ; Ota, Y. ; Inoue, K. ; Troyanovsky, B. ; Yu, Z. ; Dutton, R.W.
Author_Institution :
Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
Abstract :
Distortion simulations of GaAs MESFETs based on a physical model and applying the harmonic balance method have been demonstrated. Simulation of circuit configurations with components such as blocking capacitors and RF chokes feeding 50 ohm terminations was performed. Good agreement has been obtained between simulation and measurements for harmonic distortion and two-tone intermodulation distortion characteristics.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; digital simulation; electronic engineering computing; gallium arsenide; harmonic distortion; intermodulation distortion; semiconductor device models; GaAs; GaAs MESFETs; PISCES-HB; distortion analysis; harmonic balance method; harmonic distortion; intermodulation distortion characteristics; physical model; two-tone IMD characteristics; Capacitors; Circuit simulation; Feedback circuits; Frequency domain analysis; Gallium arsenide; Harmonic distortion; Inductors; MESFET circuits; MESFET integrated circuits; Radio frequency;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553146
