DocumentCode
3292334
Title
Basic insight about the strain engineering of n-type FinFETs
Author
Serra, N. ; Esseni, D.
Author_Institution
DIEGM-IU.NET, Univ. of Udine, Udine
fYear
2009
fDate
18-20 March 2009
Firstpage
113
Lastpage
116
Abstract
This paper presents both analytical models and numerical simulations concerning strain engineering in n-FinFETs. Our analysis identifies the mechanisms for the stress induced mobility enhancement and provides insight for the stress optimization.
Keywords
MOSFET; electron mobility; semiconductor device models; mobility enhancement; n-type FinFET; numerical simulation; strain engineering; stress optimization; Analytical models; Capacitive sensors; Carbon capture and storage; Distributed control; Effective mass; Equations; FinFETs; Numerical simulation; Silicon; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on
Conference_Location
Aachen
Print_ISBN
978-1-4244-3704-7
Type
conf
DOI
10.1109/ULIS.2009.4897551
Filename
4897551
Link To Document