Impact of strain on p-DGMOS performance using full-band Monte Carlo simulation

Author

Aubry-Fortuna, V. ; Huet, K. ; Bournel, A. ; Rideau, D. ; Chassat, C. ; Dollfus, P.

Author_Institution

Univ. Paris Sud, Orsay

fYear

2009

fDate

18-20 March 2009

Firstpage

117

Lastpage

120

Abstract

In this paper, the influence of mechanical stress on double-gate p-MOSFET performance has been investigated, by means of the full-band version of our Monte Carlo simulator (MONACO). Compressive and tensile stresses in the case of biaxially- and uniaxially-strained <100> and <110>-oriented channels have been studied. A tensile biaxial stress in plane (100) always decreases the gate delay and the lowest values are obtained for a <100>-oriented channel. A compressive uniaxial stress along <110> (or tensile uniaxial stress along <-110>) leads to an appreciable improvement of the gate delay in <110>-oriented channel devices. Resulting performance meets quite well the specifications of the updated 2008 ITRS defined for LOP45 and LSTP40.

Keywords

MOSFET; Monte Carlo methods; biaxially-strained <100>-oriented channel; biaxially-strained <110>-oriented channel; compressive stress; double-gate p-MOSFET; full-band Monte Carlo simulation; gate delay; mechanical stress; p-DGMOS performance; tensile biaxial stress; tensile uniaxial stress; uniaxially-strained <100>-oriented channel; uniaxially-strained <110>-oriented channel; Acoustic scattering; CMOS technology; Capacitive sensors; Compressive stress; Delay; MOSFET circuits; Monte Carlo methods; Optical scattering; Particle scattering; Tensile stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on

Conference_Location

Aachen

Print_ISBN

978-1-4244-3704-7

Type

conf

DOI

10.1109/ULIS.2009.4897552

Filename

4897552