Modeling of piezoresistive coefficients in Si hole inversion layers

A mobility model for hole inversion layers based on the self-consistent solution of the 6 times 6 koarr ldr poarr Schrodinger equation (SE) and Poisson equation (PE) has been developed. The mobility variation due to uniaxial stress and biaxial strain is simulated and the simulation results reproduce available measurements. The piezoresistive coefficient extraction technique based on the mobility variation due to uniaxial stress is generalized for general diamond crystal lattice material. The new derivation is applicable for arbitrary surface and channel orientations.