Author :
Palestri, P. ; Alexander, C. ; Asenov, A. ; Baccarani, G. ; Bournel, A. ; Braccioli, M. ; Cheng, B. ; Dollfus, P. ; Esposito, A. ; Esseni, D. ; Ghetti, A. ; Fiegna, C. ; Fiori, G. ; Aubry-Fortuna, V. ; Iannaccone, G. ; Martinez, A. ; Majkusiak, B. ; Monfr
Abstract :
In this paper we mutually compare advanced modeling approaches for the determination of the drain current in nanoscale MOSFETs. Transport models range from Drift-Diffusion to direct solution of the Boltzmann Transport equation with the Monte-Carlo methods. Template devices representative of 22 nm Double-Gate and 32 nm FDSOI transistors were used as a common benchmark to highlight the differences between the quantitative predictions of different approaches. Our results set a benchmark to assess modeling tools for nanometric MOSFETs.
Keywords :
Boltzmann equation; MOSFET; Monte Carlo methods; semiconductor device models; Boltzmann transport equation; FDSOI transistors; Monte-Carlo methods; advanced transport models; double-gate transistors; drift-diffusion; nanoscale nMOSFET; size 22 nm; size 32 nm; Boltzmann equation; Doping profiles; Hafnium oxide; High K dielectric materials; Intrusion detection; MOSFETs; Microelectronics; Quantization; Semiconductor process modeling; Transistors;
