Title :
First HACT analog memory devices demonstrated
Author :
Cullen, D.E. ; Miller, M.J.
Author_Institution :
United Technologies Res. Center, East Hartford, CT, USA
Abstract :
A new analog memory (AM) has been demonstrated using heterojunction acoustic charge transport (HACT) technology. The initial HACT AMs had storage time capabilities in excess of 100 μs. The Schottky electrode storage array had 36 memory cells, each cell holding two charge packets, giving a maximum signal frequency of half the Nyquist frequency, or 36 MHz. Hold voltages in the 5-8-V range were found to be adequate, and effective storage was obtained at the same DC transport current level that resulted in the best charge transport efficiency. Storage times in the millisecond range are possible with cooling to 0°C
Keywords :
acoustic charge transport devices; analogue storage; 0 degC; 36 MHz; 5 to 8 V; DC transport current level; HACT analog memory devices; Nyquist frequency; Schottky electrode storage array; charge packets; charge transport efficiency; heterojunction acoustic charge transport; hold voltages; maximum signal frequency; memory cells; storage time capabilities; Acoustic devices; Acoustic testing; Analog memory; Delay lines; Electrodes; Frequency; Heterojunctions; Surface acoustic waves; Temperature; Transducers;
Conference_Titel :
Ultrasonics Symposium, 1991. Proceedings., IEEE 1991
Conference_Location :
Orlando, FL
DOI :
10.1109/ULTSYM.1991.234148
