DocumentCode
3292580
Title
Luminescent properties of sol-gel prepared Y3Al5 O12:Tb thin films
Author
Lo, Jun-Ren ; Tseng, Tseung-Yuen ; Tyan, Jyh-Haur ; Huang, Jammy C M
Author_Institution
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear
1996
fDate
7-12 Jul 1996
Firstpage
197
Lastpage
201
Abstract
A series of Tb-activated Y3Al5O12 films have been fabricated by spin coating on silicon substrate with sol-gel solutions. The formation of a single garnet phase is observed at 800°C for 1 h in rapid thermal annealing furnace. The emission spectrum of the films induced by ultraviolet (UV) and electron excitations show the 5D to 6F transition and consisted of two groups, 5D3 to 6F (before 485 nm) and 5D4 to 6F (after 485 nm). The emission intensities of the films are dependent on the Tb concentrations
Keywords
cathodoluminescence; garnets; optical films; phosphors; photoluminescence; rapid thermal annealing; sol-gel processing; terbium; yttrium compounds; 485 nm; 800 C; Tb-activated Y3Al5O12 thin film; Y3Al5O12:Tb; electron excitation; emission spectrum; garnet; luminescence; optical transitions; rapid thermal annealing; silicon substrate; sol-gel preparation; spin coating; ultraviolet excitation; Coatings; Furnaces; Garnets; Luminescence; Phosphors; Rapid thermal annealing; Semiconductor films; Silicon; Substrates; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
Conference_Location
St. Petersburg
Print_ISBN
0-7803-3594-5
Type
conf
DOI
10.1109/IVMC.1996.601806
Filename
601806
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