Negative substrate bias effects on collector resistance in SiGe HBTs on thin film SOI

Author

Xu, Xiaobo ; Zhang, Heming ; Hu, Huiyong ; Qu, Jiangtao ; Ma, Jianli ; Qin, Shanshan

Author_Institution

Key Lab. of Minist. of Educ. for Wide Band-Gap Semicond. Mater. & Devices, Xidian Univ., Xi´´an, China

fYear

2011

fDate

15-17 April 2011

Firstpage

2380

Lastpage

2382

Abstract

An analytical expression for collector resistance of a novel vertical SiGe partially-depleted HBT on thin SOI is obtained under negative substrate biases. The resistance decreases slowly with the increase of substrate-collector bias and the influence on transit frequency is trivial and acceptable. The model is consistent with simulation result and found to be significant in the design and simulation of 0.13 μm millimeter wave SiGe SOI BiCMOS technology.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; field effect MIMIC; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; semiconductor thin films; silicon-on-insulator; SiGe; collector resistance; millimeter wave SOI BiCMOS technology; negative substrate bias effects; negative substrate biases; partially-depleted HBT; size 0.13 mum; substrate-collector bias; thin film SOI; transit frequency; Capacitance; Heterojunction bipolar transistors; Resistance; Silicon; Silicon germanium; Substrates; Thyristors; SiGe; Substrate bias effect; collector resistance; heterojunction bipolar transistor (HBT);

fLanguage

English

Publisher

ieee

Conference_Titel

Electric Information and Control Engineering (ICEICE), 2011 International Conference on

Conference_Location

Wuhan

Print_ISBN

978-1-4244-8036-4

Type

conf

DOI

10.1109/ICEICE.2011.5778282

Filename

5778282