Field emission properties of Mo-coated Si field emitter arrays and formation of molybdenum silicide

Author

Ju, Byeong-Kwon ; Park, Heung-Woo ; Lee, Yun-Hi ; Chung, In-Jae ; Haskard, M.R. ; Park, Jung-Ho ; Oh, Myung-Hwan

Author_Institution

Dept. of Electron. & Inf. Technol., Korea Inst. of Sci. & Technol., Seoul, South Korea

fYear

1996

fDate

7-12 Jul 1996

Firstpage

221

Lastpage

225

Abstract

Uniform and reproducible silicon tip arrays were fabricated using the reactive ion etching followed by the re-oxidation sharpening. Molybdenum was coated on the some of the silicon tip array. Current-voltage characteristics and current fluctuations were tested in the high vacuum level. Turn-on voltage of the uncoated tip was 35 V and maximum current was 1 mA, while turn-on voltage of the coated tip was 15 V and maximum current was 6 mA. While uncoated silicon tip was destroyed after 13 minutes after operation and showed rapid lowering of emission current, coated tip showed stable emission characteristics. Obtained currents were proved to be field emission currents using the Fowler-Nordheim plot studies

Keywords

electron field emission; molybdenum; silicon; vacuum microelectronics; 1 to 6 mA; 15 to 35 V; Fowler-Nordheim plot; Mo-coated Si field emitter array; MoSi; Si-Mo; current fluctuations; current-voltage characteristics; field emission; molybdenum silicide formation; re-oxidation sharpening; reactive ion etching; silicon tip; turn-on voltage; Coatings; Current-voltage characteristics; Etching; Field emitter arrays; Inorganic materials; Microelectronics; Scanning electron microscopy; Sensor arrays; Silicides; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International

Conference_Location

St. Petersburg

Print_ISBN

0-7803-3594-5

Type

conf

DOI

10.1109/IVMC.1996.601812

Filename

601812