DocumentCode
3292675
Title
Impact of TiN metal gate thickness and the HfSiO nitridation on MuGFETs electrical performance
Author
Rodrigues, M. ; Mercha, A. ; Simoen, E. ; Collaert, N. ; Claeys, C. ; Martino, J.A.
Author_Institution
IMEC, Heverlee
fYear
2009
fDate
18-20 March 2009
Firstpage
189
Lastpage
192
Abstract
In this work, we investigate the impact of post-deposition nitridation of the MOCVD HfSiO gate dielectric and the TiN gate electrode thickness on the electrical parameters of SOI multiple-gate FETs (MuGFETs). It is shown that nitridation reduces the EOT, enhances the gate leakage current and reduces the mobility. Although, HfSiON gate dielectric can reduce the work function (WF) sensitivity on the TiN metal gate electrode thickness.
Keywords
MOCVD coatings; carrier mobility; field effect transistors; hafnium compounds; leakage currents; semiconductor device metallisation; titanium compounds; work function; EOT; HfSiO; MOCVD; MuGFET electrical performance; SOI multiple gate FET; TiN; gate dielectric; gate leakage current; metal gate thickness; post deposition nitridation; work function sensitivity; Capacitance; Dielectric substrates; Electrodes; High K dielectric materials; High-K gate dielectrics; Leakage current; MOCVD; Optical films; Threshold voltage; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on
Conference_Location
Aachen
Print_ISBN
978-1-4244-3704-7
Type
conf
DOI
10.1109/ULIS.2009.4897568
Filename
4897568
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