Title :
Nanostructured silicon photonics devices fabricated by CMOS-compatible process
Author_Institution :
Dept. of Electr. & Comput. Eng., Yokohama Nat. Univ., Yokohama, Japan
Abstract :
Photonic nanostructures have been studied toward strong control of light emission and propagation as well as large-scale photonic integration on a chip. One of the attractive functions available with these structures is generating slow light. It flexibly changes the group velocity and delay of light, and also enhances light-matter interactions. A recent important progress in this field is that now these structures can be fabricated by using CMOS-compatible process. It enables multilayer mask process, large scale integration and sophisticated functionality. This talk will present on-chip tunable delay lines and tunable dispersion compensators, both of which are electrically controllable, nonlinear-based ultrafast delay tuning applicable to retiming of fast optical signals, on-chip optical correlator with a fast delay scanner, symbol-rate-variable DQPSK coherent receiver, efficient two-photon-absorption photo-diodes and fast and very compact MZ modulators.
Keywords :
CMOS integrated circuits; integrated optics; integrated optoelectronics; nanophotonics; nonlinear optics; optical correlation; optical delay lines; optical fabrication; optical modulation; optical receivers; photodiodes; CMOS compatible process; Mach-Zehnder modulators; Si; fast delay scanner; fast optical signal retiming; large scale photonic integration; light emission; light propagation; multilayer mask process; nanostructured silicon photonics devices; nonlinear based ultrafast delay tuning; on-chip optical correlator; photonic nanostructure; symbol r te-variable DQPSK coherent receiver; two-photon absorption photodiodes; CMOS integrated circuits; CMOS process; Chirp; Heating; Modulation; Photonics; TV; CMOS process; photonic crystal; silicon photonics; slow light;
Conference_Titel :
Photonics Global Conference (PGC), 2012
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-2513-4
DOI :
10.1109/PGC.2012.6458120